Flash memory is an electronic (i.e. no moving parts) non-volatile computer storage device which can be electrically erased and reprogrammed.
Flash memory was developed from EEPROM (electrically erasable programmable read-only memory). There are two main types of flash memory, which are named after the NAND and NOR logic gates. The internal characteristics of the individual flash memory cells exhibit characteristics similar to those of the corresponding gates.
Whereas EEPROMs had to be completely erased before being rewritten, NAND type flash memory may be written and read in blocks (or pages) which are generally much smaller than the entire device. The NOR type allows a single machine word (byte) to be written or read independently.
The NAND type is primarily used in memory cards, USB flash drives, solid-state drives, and similar products, for general storage and transfer of data. The NOR type, which allows true random access and therefore direct code execution, is used as a replacement for the older EPROM and as an alternative to certain kinds of ROM applications. However, NOR flash memory may emulate ROM primarily at the machine code level; many digital designs need ROM (or PLA) structures for other uses, often at significantly higher speeds than (economical) flash memory may achieve. NAND or NOR flash memory is also often used to store configuration data in numerous digital products, a task previously made possible by EEPROMs or battery-powered static RAM.
Example applications of both types of flash memory include personal computers, PDAs, digital audio players, digital cameras, mobile phones, synthesizers, video games, scientific instrumentation, industrial robotics, medical electronics, and so on. In addition to being non-volatile, flash memory offers fast read access times, as fast as dynamic RAM, although not as fast as static RAM or ROM. Its mechanical shock resistance helps explain its popularity over hard disks in portable devices; as does its high durability, being able to withstand high pressure, temperature, immersion in water, etc.
Although flash memory is technically a type of EEPROM, the term "EEPROM" is generally used to refer specifically to non-flash EEPROM which is erasable in small blocks, typically bytes. Because erase cycles are slow, the large block sizes used in flash memory erasing give it a significant speed advantage over old-style EEPROM when writing large amounts of data. Flash memory now costs far less than byte-programmable EEPROM and has become the dominant memory type wherever a significant amount of non-volatile, solid state storage is needed.
Other articles related to "flash memory, memory, flash":
... that also produce hard disk drives and/or flash memory are identified ... Additionally the type of memory used in their solid-state drives is noted ... does not include manufacturers of only a component of the SSD, like the flash memory controller ...
... It has developed two Flash memory technologies, single-bit-per-cell floating gate technology and one-, two- or more-bit-per-cell MirrorBit technology, with MirrorBit products based on two-bits per ... for code storage and execution is based on NOR Flash memory architecture and utilize either traditional floating gate technology or its MirrorBit technology ... MirrorBit Technology represents nearly one fourth of the entire NOR flash memory market ...
... Bing Yeh and a team of engineers developed a non-volatile memory technology company called "SuperFlash" for code or data storage in electronic systems and embedded memory for integrated logic circuits ... Non-volatile memory devices retain data without a continuous supply of power ... microprocessor or microcontroller-based electronic system requires non-volatile memory to store a basic instruction set critical to the operation of the system ...
... simple structure and high demand for higher capacity, NAND flash memory is the most aggressively scaled technology among electronic devices ... Moore's law, this has recently been accelerated in the case of NAND flash to a factor of two every two years ... As the feature size of flash memory cells reaches the minimum limit, further flash density increases will be driven by greater levels of MLC, possibly 3-D stacking of transistors, and improvements to the ...
... M-Systems did not produce the Flash memory used in their devices ... Instead they worked closely with other Flash memory manufacturers to use multiple suppliers of memory ... them that would combine the Samsung NAND Flash memory technology with the M-Systems' TrueFFS controller ...
Famous quotes containing the words memory and/or flash:
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