Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FeRAM advantages over flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles (exceeding 10 for 3.3 V devices). Disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations, and higher cost.
Other articles related to "ferroelectric ram, ram, ferroelectric":
... the only such system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM) ... F-RAM is a random-access memory similar in construction to DRAM but (instead of a dielectric layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as ... Unlike RAM devices, F-RAM retains its data memory when power is shut off or interrupted, due to the PZT crystal maintaining polarity ...
... Both the PZT ferroelectric layer and the noble metals used for electrodes raise CMOS process compatibility and contamination issues ...
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