Ion Implantation

Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and impacted into a solid. This process is used to change the physical, chemical, or electrical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as various applications in materials science research. The ions alter the elemental composition of the target, if the ions differ in composition from the target, stop in the target and stay there. They also cause much chemical and physical change in the target by transferring their energy and momentum to the electrons and atomic nuclei of the target material. This causes a structural change, in that the crystal structure of the target can be damaged or even destroyed by the energetic collision cascades. Because the ions have masses comparable to those of the target atoms, they knock the target atoms out of place more than electron beams do. If the ion energy is sufficiently high (usually tens of MeV) to overcome the coulomb barrier, there can even be a small amount of nuclear transmutation.

Read more about Ion ImplantationGeneral Principle, Hazardous Materials Note, Manufacturers of Ion Implantation Equipment

Other articles related to "ion implantation, ion, ions":

Robert W. Bower - Biography - Patent Controversy
... with both metal and polysilicon as the gate material and using both ion implantation and diffusion to form the source and drains ... general principal of using a gate as mask for both metal and polysilicon gates using ion implantation to establish the source and drain regions ... court cases that the vast majority of self-aligned gate FETs were made using ion implantation rather than diffusion to introduce the dopants into the source-drain regions ...
Manufacturers of Ion Implantation Equipment
... Advanced Ion Beam Technology Axcelis Technologies Complete Ions Facilitation Centre for Industrial Plasma Technologies Global Technologies, R D equipment and Service Ion Beam ...
Stencil Lithography - Processes - Ion Implantation
... of the membrane has to be smaller than the penetration length of the ions in the membrane material ... The ions will then implant only under the stencil apertures, into the substrate ...
Multi-threshold CMOS
... adding additional photolithography and ion implantation steps ... Typically, the concentration is adjusted by ion implantation method ... Ion implantation is then completed, with ions of the chosen dopant type penetrating the gate oxide in areas where no photoresist is present ...

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